In the field of energy storage chips, the team designed and fabricated the world''s first single-nanowire electrochemical energy-storage device, achieving the breakthrough of...
In this study, we proved that the field-effect transistor, which is the core component in microprocessors, can also serve as an amplifier for the nanosized energy
Energy Storage. Silicon Capacitors; Integrated Micro Batteries; 300 mm Technology Modules & Test Chips . Nanopatterning / E-Beam Lithography; Metallization; RF Characterization; Actuators. Mechanical Actuators. Nanoscopic Electrostatic Drive – electrostatic MEMS bending transducer; Energy Harvesting; Micromachined Ultrasonic Transducer; MEMS based Micropositioning
Superhigh energy storage density on-chip capacitors with ferroelectric Hf 0.5 Zr 0.5 O 2 /antiferroelectric Hf 0.25 Zr 0.75 O 2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition. Yuli He a, Guang Zheng a, Xiaohan Wu a, Wen-Jun Liu a, David Wei Zhang ab and Shi-Jin Ding * ab a State Key Laboratory of ASIC and System, School of Microelectronics,
The performance of logic circuits encompasses the same trends as memories plus some additional considerations (see Fig. 3) eld-effect transistors (FET) are in general faster than spintronic
6 天之前· Since electronic devices deteriorate when used in extremely high electric fields, it is essential to explore the potential for dielectric capacitors with high energy density in medium electric fields (MEFs). In this account, a polymorphic multiscale domains construction strategy is suggested to optimize the energy storage performance (ESPs) of (1-x)Bi0.5Na0.5TiO3
Using a three-pronged approach — spanning field-driven negative capacitance stabilization to increase intrinsic energy storage, antiferroelectric superlattice engineering to increase total
In this work, a novel ferroelectric field-effect transistor (FeFET)-based 3-D NAND architecture for on-chip training accelerator is proposed. The reduced peripheral circuit overheads due to the low operation voltage of the FeFET device and ultrahigh density of 3-D NAND architecture enable storing and computing all the intermediate data on chip
Future data-intensive applications will have integrated circuit architectures combining energy-efficient transistors, high-density data storage and electro-optic sensing arrays in a single...
As a new type of one-dimensional semiconductor nanometer material, silicon nanowires (SiNWs) possess good application prospects in the field of biomedical sensing. SiNWs have excellent electronic properties for improving the detection sensitivity of biosensors. The combination of SiNWs and field effect transistors (FETs) formed one special biosensor with
In the field of chemosensor technology, Fraunhofer IPMS develops sensors for the detection of ion concentrations and conductivities in aqueous solutions. Development and pilot production of ISFET chips for integrators, system developers and industry.
6 天之前· Since electronic devices deteriorate when used in extremely high electric fields, it is essential to explore the potential for dielectric capacitors with high energy density in medium
Hafnium oxide-based ferroelectric memories are among the most promising emerging technologies for future ultra-low power non-volatile memory applications. Therefore, Fraunhofer IPMS'' CNT business unit develops fully
In this work, a novel ferroelectric field-effect transistor (FeFET)-based 3-D NAND architecture for on-chip training accelerator is proposed. The reduced peripheral circuit overheads due to the
In this study, we proved that the field-effect transistor, which is the core component in microprocessors, can also serve as an amplifier for the nanosized energy-storage devices. A 3-fold-enhanced stored charge is achieved under the field effect, paving the way for the high-performance nanosized self-power system.
They discovered that relative to energy storage, putting one layer of negative capacitance dielectric on top of a conventional dielectric layer increases the capacitance. While two layers of conventional dielectric decrease capacitance, one negative and one conventional dielectric layer has the opposite effect. Thin-film energy storage capacitor.
In the field of energy storage chips, the team designed and fabricated the world''s first single-nanowire electrochemical energy-storage device, achieving the breakthrough of...
In the field of energy storage, research on single nanowire electrochemical devices, individual nanosheet electrochemical devices, and on-chip micro-supercapacitors are presented. Finally, a brief analysis of current on-chip devices is provided, followed by a discussion of the future development of micro/nano devices. It should be noted that, we have weakened
Using a three-pronged approach — spanning field-driven negative capacitance stabilization to increase intrinsic energy storage, antiferroelectric superlattice engineering to
This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate machine...
Schematic of field-effect energy-storage devices and the boosted stored charge under back-gate voltages. Upon applying positive back-gate voltages, the upper shifted redox peaks form in the cyclic voltametric curves, which implies a wider range of accessible electronic densities of states in the nanowire.
Based on the "ion-confined transport" strategy, supercapacitor-diodes and switchable supercapacitors as new ion-type devices have emerged with promising applications
This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to
Hafnium oxide-based ferroelectric memories are among the most promising emerging technologies for future ultra-low power non-volatile memory applications. Therefore, Fraunhofer IPMS'' CNT business unit develops fully CMOS-compatible hafnium oxidebased ferroelectric (FE) devices for integration into a wide range of chip technologies.
Energy-saving AI chip In-memory computing Date: October 26, 2023 Source: Technical University of Munich (TUM) Summary: A computer scientist has developed an AI-ready architecture that is twice as
In the field of chemosensor technology, Fraunhofer IPMS develops sensors for the detection of ion concentrations and conductivities in aqueous solutions. Development and pilot production of ISFET chips for integrators, system
Based on the "ion-confined transport" strategy, supercapacitor-diodes and switchable supercapacitors as new ion-type devices have emerged with promising applications in fields such as smart grids, energy storage chips, ionic logic circuits, and neuromorphic computing. In this review, we first clarify the mechanisms of "ion-confined
Dear Colleagues, As the development of miniaturized electronics in the ascendance, much attention is focused on the study about the construction of power-MEMS and energy storage devices for on-chip microsystems, including versatile microbatteries, microsupercapacitors, energy harvesting devices, power generation devices, etc. Miniaturized
complex and energy-hungry for a computer," explains the professor. Modern chips: Many steps, low energy consumption These key requirements for a chip are summed up mathematically by the parameter TOPS/W: "tera-operations per second per watt". This can be seen as the currency for the chips of the future. The question is how
The reduced peripheral circuit overheads due to the low operation voltage of the FeFET device and ultrahigh density of 3-D NAND architecture enable storing and computing all the intermediate data on chip during the training process. We present a custom design of a 108-Gb chip with a 59.91-mm 2 area with 45% array efficiency.
In the mixed-ferroic state, the initial ferroelectric phase fraction decreases the electric field window of the super-linear regime II, in which the antiferroelectric t-phase converts to the ferroelectric o-phase, thereby lowering the total possible charge stored on integration.
Also, our proposed charge-based computing scheme considerably reduces energy consumption in the FeFETs crossbar by eliminating power-intensive TIAs for current-to-voltage conversion and bulky capacitors for voltage accumulation as used in previous approaches.
Ferroelectric Field Effect Transistor (FeFET) 64-Bit-Hafniumoxid-basierter FRAM-Demonstrator. FRAM memories are a promising candidate for future non-volatile memory applications with ultra-low power consumption. At Fraunhofer IPMS, hafnium oxide-based ferroelectrics are therefore being investigated for their use in CMOS chip production.
The largest ESD is reported for the squeezed AFE HZO (80% Zr), in which the onset of the phase transition to the FE state is lowered closer to zero field compared with the normal AFE state at 100% Zr composition; this leads to an earlier onset of the enhanced energy storage during regime II.
In the pursuit of energy-efficient IMC units, a critical consideration is the reduction of the operating voltage for these devices. Typically, HZO-based FeCaps incorporate a 10-nm-thick layer which facilitates operation at voltages of around 2 V or higher.
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