The invention discloses a radiation reinforced SiC device structure based on distributed capacitance; in the invention, floating second doping type structures with high doping concentration are...
Error-Correction Code (ECC) Memory Protons cosmic rays, and solar heavy-ions can cause a single bit to spontaneously flip to the opposite state. Error-correcting codes store redundant
The invention also relates to a net-shaped capacitor which can improve the SER FIT rate. In one embodiment, the capacitor is connected between an input end and an output end of a latch unit in...
And four unbiased parts (connected to ground). As a control lot, the comparison was made using data from on a standard-MnO 2 tantalum capacitor, T492 style, [8]. TABLE I. Tantalum solid capacitors submitted to radiation test. Style Part Number Technology Qty. T492 T492D106K025DH4215 Solid MnO 2 5ON +4OFF+1 T541 T541X337M016AH Polymer 5ON
The radiation considered includes neutrons, gamma rays, and charged particles. The information is useful to design engineers responsible for choosing candidate materials or devices for use
Drawing Inductor Layout with a Reinforcement Learning Agent: between an inductor and a capacitor to generate the oscillating signal. In this case, the capacitor is tuned by a voltage input to modify the frequency. To achieve a wide tuning range with a VCO, the effective resistance of the inductor should remain low, the Self ∗Both authors contributed equally to this
This paper proposes an advantage actor–critic (A2C) reinforcement learning (RL)–based method for the optimization of decoupling capacitor (decap) design. Unlike the previous RL-based methods used for the selection of decap types or decap placements, the proposed method enables placement and the simultaneous selection of both decap types and
In this work, we introduce a novel two-phase optimization flow using deep reinforcement learning to tackle both the on-chip small signal noise and SSN. Initially, we optimize the impedance in the frequency domain to maintain the small signal noise within acceptable limits while avoiding over-design. Subsequently, in the time domain, we refine the PDN to minimize
The radiation considered includes neutrons, gamma rays, and charged particles. The information is useful to design engineers responsible for choosing candidate materials or devices for use in a radiation environment.
In this study, a BRAM fault injection experimental system is designed using Vivado to compare the reinforcement measures such as Hamming code, interleaved Hamming code, interleaved cyclic code, BCH code, and triple modular redundancy. Mathematical methods are employed
Radiation hardening (Johansson, 1977) is a technique to design and test electronic components and systems to make them resistant to damage or malfunctions caused by ionizing radiation such as particle radiation and high-energy electromagnetic radiation, which would be encountered in the outer space, high-altitude flight, around nuclear reactors
Two different series of tantalum polymer capacitors were submitted to radiation tests. The specific component numbers are shown in TABLE I. On each of them, nine samples of each series were irradiated: five
In this study, a BRAM fault injection experimental system is designed using Vivado to compare the reinforcement measures such as Hamming code, interleaved Hamming
high radiation applications tantalum capacitor construction. radiation tolerance of tantalum polymer capacitors 3 radiation testing tantalum polymer construction Figure 1: Tantalum Polymer Construction Figure 3: MT25 components including (1) magnetron, (2) phase shifter, (3) circulator, (4) water load, (5) accelerating cavity, (6) main magnet (vacuum chamber), (7) electron
Abstract—This ADC has been designed to improve a Silicon proven single ended rad-hard 10 bit SAR ADC. It includes an 8:2 analog MUX combined with an auto-zero amplifier (0dB, 6dB and 12dB) and an internal voltage reference, which can be bypassed.
Error-Correction Code (ECC) Memory . Protons, cosmic rays, and solar heavy-ions can cause a single bit to spontaneously flip to the opposite state. Error-correcting codes store redundant data in order to be able to recover stored information even when some of the data has been corrupted. The amount of data that can be corrected without a system
In this study, a BRAM fault injection experimental system is designed using Vivado to compare the reinforcement measures such as Hamming code, interleaved Hamming code, interleaved cyclic code, BCH code, and triple modular redundancy. Mathematical methods are employed to calculate their reliability performance indicators. The conclusion is that
Radiation hardening (Johansson, 1977) is a technique to design and test electronic components and systems to make them resistant to damage or malfunctions caused by ionizing radiation
proposed a novel radiation hardened SRAM cell (RHBQ), which is based on the traditional Quatro-10T structure and combined with the source isolation reinforcement technol-
The invention discloses a radiation reinforced SiC device structure based on distributed capacitance; in the invention, floating second doping type structures with high doping
Error-Correction Code (ECC) Memory Protons cosmic rays, and solar heavy-ions can cause a single bit to spontaneously flip to the opposite state. Error-correcting codes store redundant data in order to be able to recover stored information even when some of the data has been corrupted.
In this study, a BRAM fault injection experimental system is designed using Vivado to compare the reinforcement measures such as Hamming code, interleaved Hamming code, interleaved cyclic...
Figure 4: Capacitor test PCBs and corresponding dose/bias table for radiation exposure The irradiation of parts technically used a photon beam (or Bremsstrahlung) with energy of 20 MeV. This is an electromagnetic radiation produced by the deceleration of electrons passed through a tungsten target placed behind the exit window [4]. Tantalum MnO 2
The invention also relates to a net-shaped capacitor which can improve the SER FIT rate. In one embodiment, the capacitor is connected between an input end and an output end of a latch
Figure 4: Capacitor test PCBs and corresponding dose/bias table for radiation exposure The irradiation of parts technically used a photon beam (or Bremsstrahlung) with energy of 20
This chapter deals with modeling the radiation from rectangular film capacitors as a power electronics component. The rectangular film capacitors are sources of electromagnetic radiation, where its characterization is crucial for electronic circuits EMC. Our study presents the analyses and modeling of the magnetic near field radiated by the plastic and the polyester
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Abstract—This ADC has been designed to improve a Silicon proven single ended rad-hard 10 bit SAR ADC. It includes an 8:2 analog MUX combined with an auto-zero amplifier (0dB, 6dB and
Paper tables with annotated results for Hierarchical Decoupling Capacitor Optimization for Power Distribution Network of 2.5D ICs with Co-Analysis of Frequency and Time Domains Based on Deep Reinforcement Learning
Through the radiation hardening design, the result shows that the resistance of our chip to neutron radiation is larger than 10 15 n cm -2, while the resistance to ionizing radiation is larger than 10 7 rad and the resistance to transient radiation is larger than 10 9 rad sec -1.
In this study, we overview physical and logical radiation hardening techniques and propose some effective solutions in our power amplification chip design to resist the radiation. Typical physical radiation-hardening techniques are using insulating substrates, utilizing bipolar integrated circuits, adopting radiation-tolerant SRAM.
Information Technology Journal, 9: 1068-1080. Environments with large amount of ionizing radiation create special design challenges for integrated circuits, typically for RF power amplifier chips (Barbara et al., 1990). A single charged particle can knock thousands of electrons loose, resulting in electronic noise and signal spikes.
For high error rates, however, stronger and multiple error correcting codes such as BCH codes are required for nano-scale devices (Sun and Zhang, 2006).
Fa-Xin Yu, Jia-Rui Liu, Zheng-Liang Huang, Hao Luo and Zhe-Ming Lu, 2010. Overview of Radiation Hardening Techniques for IC Design.
Overview of Radiation Hardening Techniques for IC Design. Information Technology Journal, 9: 1068-1080. Environments with large amount of ionizing radiation create special design challenges for integrated circuits, typically for RF power amplifier chips (Barbara et al., 1990).
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